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2SK690-M MESFET-N channel 10V 150mA-600mA -6V SOT-89 marking 3M High Frequency FETs/Large collector dissipation PC
| 最大源漏极电压Vds Drain-Source Voltage | 10V |
| 栅源极击穿电压V(BR)GS Gate-Source Voltage | -6V |
| 漏极电流(Vgs=0V)IDSS Drain Current | 150mA-600mA |
| 关断电压Vgs(off) Gate-Source Cut-off Voltage | -6V |
| 耗散功率Pd Power Dissipation | 1W |
| Description & Applications | High Frequency FETs. GaAs N-Channel MES FET. For UHF medium output power amplification. Features . Large collector dissipation PC. . Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. |
| 描述与应用 | 高频场效应管。 砷化镓N沟道MES FET。 UHF中等输出功率放大。 特点 .大集电极耗散PC。 .小功率型封装，允许瘦身套和通过自动插入磁带/盒包装。 |
