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3SK186FI MOSFET N-Channel 12V 35mA SOT-143/MPAK-4 marking FI UHF TV tunerRF amplifier
| 最大源漏极电压Vds Drain-Source Voltage | 12V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | 35mA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5--0.8V |
| 耗散功率Pd Power Dissipation | 100mW/0.1W |
| Description & Applications | Silicon N-Channel Dual Gate MOS FET Features Silicon N-Channel Dual Gate MOS FET UHF TV tuner RF amplifier |
| 描述与应用 | 硅N沟道双栅MOS FET 特性 硅N沟道双栅MOS FET UHF电视调谐器RF放大器 |
