3SK274 MESFET-N channel -9V 6mA-20mA -0.7V -- -1.8V SOT-343 marking UN RF application|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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3SK274 MESFET-N channel -9V 6mA-20mA -0.7V -- -1.8V SOT-343 marking UN RF application

Model：3SK274
Mark / screen / code / typing：UN
Manufacturer：
Date Code：05+
Package：SOT-343
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	-9V
栅源极击穿电压V(BR)GS Gate-Source Voltage	-4V
漏极电流(Vgs=0V)IDSS Drain Current	6mA-20mA
关断电压Vgs(off) Gate-Source Cut-off Voltage	-0.7V -- -1.8V
耗散功率Pd Power Dissipation	100mW/0.1W
Description & Applications	TOSHIBA FIELD EFFECT TRANSISTER .GaAs N-channel Dual Gate MES FET. Applications: TV TUNER,UHF RF AMPLIFIER APPLICATIONS.
描述与应用	东芝场效应型晶体管 .砷化镓N沟道双栅MES FET .应用; 电视调谐器，超高频 RF放大器.

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