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APM2318AC-TRL MOSFET N-Channel 30V 3A SOT-23/SC-59 marking M18B

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Product description
最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage12V
最大漏极电流Id Drain Current3A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.050Ω/Ohm @3A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1.3V
耗散功率Pd Power Dissipation830mW/0.83W
Description & Applications30V/3A RDS(ON)=35mΩ(typ.) @ VGS=10V RDS(ON)=40mΩ(typ.) @ VGS=4.5V RDS(ON)=60mΩ(typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)
描述与应用30V/3A RDS(ON)=35mΩ(typ.) @ VGS=10V RDS(ON)=40mΩ(typ.) @ VGS=4.5V RDS(ON)=60mΩ(typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)
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