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BC807-25 PNP transistors(BJT) Vcbo=-50V Vco=-45v Ic= -500mA/-0.5A ft=200MHz hfe=160~400 Vce=-700mV/-0.7V SOT-23/SMT3 marking 5B AF drive/low poweroutput
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
−50V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
−45V |
集电极连续输出电流IC Collector Current(IC) |
−500mA/-0.5A |
截止频率fT Transtion Frequency(fT) |
200MHz |
直流电流增益hFE DC Current Gain(hFE) |
160~400 |
管压降VCE(sat) Collector-Emitter SaturationVoltage |
−700mV/-0.7V |
耗散功率Pc PoWer Dissipation |
330mW/0.33W |
Description & Applications | ·For general AF applications ·High collector current ·High current gain · Low collector-emitter saturation voltage · Comlementary types: BC817, BC818 (NPN) |
描述与应用 | ·一般AF应用 ·高集电极电流 ·高电流增益 ·低集电极 - 发射极饱和电压 ·互补类型:BC817,BC818(NPN) |