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BC847bT NPN Transistors(BJT) 50V 100mA/0.1A 250MHz 200~450 200~600 mV SOT-23/SC-59 marking 1F

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
50V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
45V
集电极连续输出电流IC
Collector Current(IC)
100mA/0.1A
截止频率fT
Transtion Frequency(fT)
250MHz
直流电流增益hFE
DC Current Gain(hFE)
200~450
管压降VCE(sat)
Collector-Emitter Saturation Voltage
200~600 mV
耗散功率Pc
Power Dissipation
250mW/0.25W
Description & ApplicationsNPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC856, BC857, BC858 BC859, BC860 (PNP)
描述与应用NPN硅晶体管自动对焦 AF输入级和驱动器应用 高电流增益 低集电极 - 发射极饱和电压,低管压降 低噪音30 Hz和15千赫之间 互补类型:BC856,BC857,BC858                                            BC859,BC860(PNP)
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