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BC859CW PNP transistors(BJT) -30V -100mA/-0.1A 100MHz 420~800 -650mV/-0.65V SOT-323/SC-70 marking 4ct low noise
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | −30V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −30V |
集电极连续输出电流IC Collector Current(IC) | −100mA/-0.1A |
截止频率fT Transtion Frequency(fT) | 100MHz |
直流电流增益hFE DC Current Gain(hFE) | 420~800 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | −650mV/-0.65V |
耗散功率Pc PoWer Dissipation | 200mW/0.2W |
Description & Applications | PNP general purpose transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment. |
描述与应用 | PNP通用晶体管 特点 •低电流(最大100 mA) •低电压(最大45 V)。 应用 •低噪音录音机,音响放大器和其他声频设备阶段。 |