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BC869 PNP transistors(BJT) -32V -1A 40MHz 100~375 -500mV/-0.5V SOT-89/SC-62 marking CEC low voltage/high current
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | −32V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −20V |
集电极连续输出电流IC Collector Current(IC) | -1A |
截止频率fT Transtion Frequency(fT) | 40MHz |
直流电流增益hFE DC Current Gain(hFE) | 100~375 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | −500mV/-0.5V |
耗散功率Pc PoWer Dissipation | 1.35W |
Description & Applications | PNP medium power transistor FEATURESFEATURES • High current (max. 1 A) • Low voltage (max. 20 V). APPLICATIONS • Low voltage, high current LF applications. |
描述与应用 | PNP中等功率晶体管 特点 •高电流(最大1 A) •低电压(最大20 V)。 应用 •低电压,高电流的低频应用 |