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BCR198S PNP+PNP Complex Bipolar Digital Transistor -50V -70mA HEF=70 R1=R2=47KΩ 250mW/0.25W SOT-363/SC-88/SC70-6 marking WR switching inverting interface driver circuit

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Product description

V(BR) CBO

Collector-Base Voltage

 -50V

V(BR) CEO

Collector-Emitter Voltage

 -50V
Collector Current(IC)  -100MA/-0.1A
 Input Resistance(R1)  47KΩ
Base-Emitter Resistance(R2)  47KΩ
Base-Emitter Input Resistance Ratio (R1/R2)  1
DC Current Gain(hFE)  70
Transtion Frequency(fT)  190MHZ
Power Dissipation (Pd)  250MW/0.25W
Description & Applications  PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
 driver circuit
• Built in bias resistor (R1 = 47kΩ , R2 = 47kΩ )
Technical Documentation Download Read Online

 

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