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BCW66H NPN Transistors(BJT) 75V 800mA/0.8A 100MHz 250~630 700mV/0.7V SOT-23/SC-59 marking EH
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 75V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 45V |
集电极连续输出电流IC Collector Current(IC) | 800mA/0.8A |
截止频率fT Transtion Frequency(fT) | 100MHz |
直流电流增益hFE DC Current Gain(hFE) | 250~630 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 700mV/0.7V |
耗散功率Pc Power Dissipation | 330mW/0.33W |
Description & Applications | SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
描述与应用 | SOT23 NPN硅平面 中等功率晶体管 |