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BCX18LT1 PNP transistors（BJT） -30V -500mA/-0.5A 100~600 -620mV/-0.62V SOT-23/SC-59 marking T2
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | −30V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −25V |
| 集电极连续输出电流IC Collector Current(IC) | −500mA/-0.5A |
| 截止频率fT Transtion Frequency(fT) | |
| 直流电流增益hFE DC Current Gain(hFE) | 100~600 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −620mV/-0.62V |
| 耗散功率Pc PoWer Dissipation | 300mW/0.3W |
| Description & Applications | General Purpose Transistors (Voltage and Current are Negative for PNP Transistors) Features • Pb−Free Package is Available |
| 描述与应用 | 通用晶体管 （PNP晶体管负电压和电流） 特点 •无铅包装是可用 |
