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BF550 PNP transistors(BJT) -40V -25mA 375MHz 15 -10V SOT-23/SC-59 marking LA low current/low voltage
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | −40V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −40V |
集电极连续输出电流IC Collector Current(IC) | −25mA |
截止频率fT Transtion Frequency(fT) | 325MHz |
直流电流增益hFE DC Current Gain(hFE) | 50 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | |
耗散功率Pc PoWer Dissipation | 250mW/0.25W |
Description & Applications | PNP medium frequency transistor FEATURES • Low current (max. 25 mA) • Low voltage (max. 40 V). APPLICATIONS • Medium frequency applications in thick and thin film circuits. |
描述与应用 | PNP中频晶体管 特点 •低电流(最大25毫安) •低电压(最大40 V)。 应用 •中频应用中厚膜和薄膜电路 |