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BF579 PNP transistors（BJT） -20V -25mA 1.75GHz 20~90 -10V SOT-23/SC-59 marking G7
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | −20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −20V |
| 集电极连续输出电流IC Collector Current(IC) | −25mA |
| 截止频率fT Transtion Frequency(fT) | 1.75GHz |
| 直流电流增益hFE DC Current Gain(hFE) | 20~90 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -10V |
| 耗散功率Pc PoWer Dissipation | 200mW/0.2W |
| Description & Applications | Silicon PNP Planar RF Transistor Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features High transition frequency Low distortion |
| 描述与应用 | 硅PNP平面RF晶体管 应用 UHF/ VHF不受控制的前置级低噪声和低交叉调制。 特点 高转换频率 低失真 |
