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BFG196 NPN Transistors(BJT) 20V 100mA/0.1A 5GHz~7.5GHz 50~200 SOT-223 marking BFG196 low noise，low distortion wideband antenna amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 截止频率fT Transtion Frequency(fT) | 5GHz~7.5GHz |
| 直流电流增益hFE DC Current Gain(hFE) | 50~200 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | 800mW/0.8W |
| Description & Applications | NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fT = 7.5GHz F = 1.5 dB at 900MHz |
| 描述与应用 | NPN硅RF晶体管 •低噪声，低失真宽带 天线放大器和电信 集电极电流高达1.5GHz系统 20mA到80毫安的 •功率放大器DECT和PCN系统 •FT =的7.5GHz F =1.5分贝在900MHz |
