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BFG591 NPN Transistors(BJT) 20V 200mA/0.2A 7GHz 60~250 SOT-223/SC-73 marking BFG591 high powergain low noise coefficient
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流IC Collector Current(IC) | 200mA/0.2A |
| 截止频率fT Transtion Frequency(fT) | 7GHz |
| 直流电流增益hFE DC Current Gain(hFE) | 60~250 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | 2W |
| Description & Applications | NPN 7 GHz wideband transistors FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS Intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscriber equipment. |
| 描述与应用 | NPN7 GHz的宽带晶体管 特点 •高功率增益 •低噪声系数 •高转换频率 •黄金金属确保卓越的可靠性。 应用 拟在GHz范围内的应用程序，如MATV或CATV放大器和射频通信用户设备。 |
