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BFP420 NPN Transistors(BJT) 10V 35mA 25GHz 60~130 SOT-343 marking AM high gain low noise amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 12V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 4.5V |
| 集电极连续输出电流IC Collector Current(IC) | 35mA |
| 截止频率fT Transtion Frequency(fT) | 25GHz |
| 直流电流增益hFE DC Current Gain(hFE) | 60~130 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | 160mW/0.16W |
| Description & Applications | NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms= 21 dB at 1.8 GHz • Transition frequency fT = 25 GHz • Gold metallization for high reliability • SIEGET 25 GHz fT - Line • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 |
| 描述与应用 | NPN硅RF晶体管 •对于高增益低噪声放大器 •对于振荡器高达10 GHz •噪声系数F =1.1dB在1.8 GHz 杰出GMS=21dB在1.8 GHz •过渡频率fT=25 GHz的 •高可靠性的黄金金属 •SIEGET 25 GHz的FT - 线 •无铅（符合RoHS）包1） •符合AEC Q101 |
