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BFR180 NPN Transistors(BJT) 10V 4mA 7GHz 30~200 SOT-23/SC-59 marking RD low noise,high gain wideband amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
10V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
8V
集电极连续输出电流IC
Collector Current(IC)
4mA
截止频率fT
Transtion Frequency(fT)
7GHz
直流电流增益hFE
DC Current Gain(hFE)
30~200
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
30mW
Description & ApplicationsNPN Silicon RF Transistor For low-noise, high-gain broadband amplifiers at collector currents from 0.2 mA to 2.5 mA fT = 7 GHz F = 2.1 dB at 900 MHz
描述与应用NPN硅RF晶体管 低噪声,高增益宽带放大器集电极电流从0.2mA到2.5mA fT = 7 GHz F = 2.1 dB at 900 MHz
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