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BFR180 NPN Transistors(BJT) 10V 4mA 7GHz 30~200 SOT-23/SC-59 marking RD low noise，high gain wideband amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 10V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 8V |
| 集电极连续输出电流IC Collector Current(IC) | 4mA |
| 截止频率fT Transtion Frequency(fT) | 7GHz |
| 直流电流增益hFE DC Current Gain(hFE) | 30~200 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | 30mW |
| Description & Applications | NPN Silicon RF Transistor For low-noise, high-gain broadband amplifiers at collector currents from 0.2 mA to 2.5 mA fT = 7 GHz F = 2.1 dB at 900 MHz |
| 描述与应用 | NPN硅RF晶体管 低噪声，高增益宽带放大器集电极电流从0.2mA到2.5mA fT = 7 GHz F = 2.1 dB at 900 MHz |
