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BFR53 NPN Transistors(BJT) 18V 50mA 2GHz 25 SOT-23/SC-59 marking N1 high powergain
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 18V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流IC Collector Current(IC) | 50mA |
| 截止频率fT Transtion Frequency(fT) | 2GHz |
| 直流电流增益hFE DC Current Gain(hFE) | 25 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | 250mW/0.25W |
| Description & Applications | NPN 2 GHz wideband transistor FEATURES • Very low intermodulation distortion • Very high power gain. APPLICATIONS • Thick and thin-film circuits. DESCRIPTION NPN wideband transistor in a plastic SOT23 package. |
| 描述与应用 | 2 GHz的宽带晶体管NPN 特点 •非常低的互调失真 •非常高的功率增益。 应用 •厚薄膜电路。 说明 NPN宽带晶体管在一个塑料 SOT23封装。 |
