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BFS17S NPN Transistors(BJT) 25V 25mA 2.5GHz 20~150 400mV/0.4V SOT-363/SC70-6 marking MC wideband amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
25V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
15V |
| 集电极连续输出电流IC Collector Current(IC) |
25mA |
| 截止频率fT Transtion Frequency(fT) |
2.5GHz |
| 直流电流增益hFE DC Current Gain(hFE) |
20~150 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage |
400mV/0.4V |
| 耗散功率Pc Power Dissipation |
280mW/0.28W |
| Description & Applications | NPN Silicon RF Transistor For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA |
| 描述与应用 | NPN硅RF晶体管 对于宽带放大器高达1 GHz的集电极电流从1 mA到20 mA |
