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BFS17S NPN Transistors(BJT) 25V 25mA 2.5GHz 20~150 400mV/0.4V SOT-363/SC70-6 marking MC wideband amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
25V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
15V
集电极连续输出电流IC
Collector Current(IC)
25mA
截止频率fT
Transtion Frequency(fT)
2.5GHz
直流电流增益hFE
DC Current Gain(hFE)
20~150
管压降VCE(sat)
Collector-Emitter Saturation Voltage
400mV/0.4V
耗散功率Pc
Power Dissipation
280mW/0.28W
Description & Applications NPN Silicon RF Transistor For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
描述与应用 NPN硅RF晶体管  对于宽带放大器高达1 GHz的集电极电流从1 mA到20 mA
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