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BFS19 NPN Transistors(BJT) 30V 30mA 260MHz 65~225 SOT-23/SC-59 marking F2
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流IC Collector Current(IC) | 30mA |
| 截止频率fT Transtion Frequency(fT) | 260MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 65~225 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | 250mW/0.25W |
| Description & Applications | NPN medium frequency transistor FEATURES • IC(max) = 25 mA • VCEO(max) = 20 V. APPLICATIONS • Medium frequency applications in thick and thin-film circuits. DESCRIPTION NPN medium frequency transistor in a SOT23 plastic package. |
| 描述与应用 | NPN中频晶体管 特点 •IC（最大值）= 25 mA的 •VCEO（最大值）=20 V。 应用 中频应用在厚薄膜电路。 说明 NPN中频晶体管在SOT23塑料包装。 |
