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BFS540 NPN Transistors(BJT) 20V 120mA/0.12A 9Ghz 100~250 SOT-323/SC-70 marking E4 RF wideband amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流IC Collector Current(IC) | 120mA/0.12A |
| 截止频率fT Transtion Frequency(fT) | 9Ghz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~250 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | 500mW/0.5W |
| Description & Applications | NPN 9 GHz wideband transistor FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability SOT323 package. APPLICATIONS RF wideband amplifier applications such as satellite TV systems and RF portable communication equipment with signal frequencies up to 2 GHz. |
| 描述与应用 | NPN9 GHz的宽带晶体管 特点 高功率增益 低噪声系数 高转换频率 黄金金属确保卓越的可靠性 SOT323信封。 应用 射频宽带放大器的应用 如卫星电视系统及射频 便携式通信设备 信号频率高达2 GHz。 |
