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BFT92W PNP transistors(BJT) -20V -35mA 4GHz 50 SOT-323/SC-70 marking W1 high powergain

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
−20V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−15V
集电极连续输出电流IC
Collector Current(IC)
−35mA
截止频率fT
Transtion Frequency(fT)
4GHz
直流电流增益hFE
DC Current Gain(hFE)
50
管压降VCE(sat)
Collector-Emitter SaturationVoltage
耗散功率Pc
PoWer Dissipation
300mW/0.3W
Description & ApplicationsPNP 4 GHz wideband transistor FEATURES • High power gain • Gold metallization ensures excellent reliability • SOT323 (S-mini) package. APPLICATION It is intended as a general purpose transistor for wideband applications up to 2 GHz.
描述与应用PNP4 GHz的宽带晶体管 特点 •高功率增益 •黄金金属确保卓越的可靠性 •SOT323(S-迷你)封装。 应用 它的目的是作为一个通用的晶体管为高达2 GHz的宽带应用。
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