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BSH112 MOSFET N-Channel 60V 300mA/0.3A SOT-23/SC-59 marking WK1

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Product description
最大源漏极电压Vds Drain-Source Voltage60V
最大栅源极电压Vgs(±) Gate-Source Voltage15V
最大漏极电流Id Drain Current300mA/0.3A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage
耗散功率Pd Power Dissipation830mW/0.83W
Description & ApplicationsTrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package Gate-source ESD protection diodes
描述与应用开关速度非常快 逻辑电平兼容 超小型表面贴装封装 门源的ESD保护二极管
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