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BSH112 MOSFET N-Channel 60V 300mA/0.3A SOT-23/SC-59 marking WK1

Model：BSH112
Mark / screen / code / typing：wk1
Manufacturer：
Date Code：06+ROHS 06NOPB65RM
Package：SOT-23/SC-59
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	60V
最大栅源极电压Vgs(±) Gate-Source Voltage	15V
最大漏极电流Id Drain Current	300mA/0.3A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs（th） Gate-Source Threshold Voltage
耗散功率Pd Power Dissipation	830mW/0.83W
Description & Applications	TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package Gate-source ESD protection diodes
描述与应用	开关速度非常快逻辑电平兼容超小型表面贴装封装门源的ESD保护二极管

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