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BSP125 MOSFET N-Channel 600V 120mA/0.12A SOT-223/SC-73/TO261-4 marking BSP125 ultra high frequency
| 最大源漏极电压Vds Drain-Source Voltage | 600V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 120mA/0.12A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.3-2.3V |
| 耗散功率Pd Power Dissipation | 1.8W |
| Description & Applications | • N-Channel • Enhancement mode • Logic Level • dv/dt rated • Pb-free lead plating; RoHS compliant x Qualified according to AEC Q101 |
| 描述与应用 | •N沟道 •增强模式 •逻辑电平 •dv / dt的额定 •无铅引脚电镀，符合RoHS x符合AEC Q101 |
