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BSP297 MOSFET N-Channel 200V 650mA/0.65A SOT-223/SC-73/TO261-4 marking BSP297 RF

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Product description
最大源漏极电压Vds Drain-Source Voltage200V
最大栅源极电压Vgs(±) Gate-Source Voltage14V
最大漏极电流Id Drain Current650mA/0.65A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance2Ω/Ohm @650mA,10V
开启电压Vgs(th) Gate-Source Threshold Voltage0.8-2V
耗散功率Pd Power Dissipation1.8W
Description & Applications• N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V
描述与应用•N通道 •增强模式 •逻辑电平 •VGS(TH)=0.8 ...2.0V
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