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BSP297 MOSFET N-Channel 200V 650mA/0.65A SOT-223/SC-73/TO261-4 marking BSP297 RF
最大源漏极电压Vds Drain-Source Voltage | 200V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 14V |
最大漏极电流Id Drain Current | 650mA/0.65A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 2Ω/Ohm @650mA,10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 0.8-2V |
耗散功率Pd Power Dissipation | 1.8W |
Description & Applications | • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V |
描述与应用 | •N通道 •增强模式 •逻辑电平 •VGS(TH)=0.8 ...2.0V |