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BSP316S MOSFET P-Channel -100V 650mA 1.4ohm SOT-223 marking BSP316S

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-100V
最大栅源极电压Vgs(±)
Gate-Source Voltage		-100V
最大漏极电流Id
Drain Current		-0.65A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		1.4Ω @-650mA,-10V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-0.8--2V
耗散功率Pd
Power Dissipation		1.8W
Description & Applications• P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V
描述与应用•P沟道 •增强模式 •逻辑电平 •VGS（TH）=-0.8-2.0 V
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