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BSR19 NPN Transistors(BJT) 160V 300mA/0.3A 100~300MHz 60~250 250mV/0.25V SOT-23/SC-59 marking U35 generalswitch and amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 160V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 140V |
| 集电极连续输出电流IC Collector Current(IC) | 300mA/0.3A |
| 截止频率fT Transtion Frequency(fT) | 100~300MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 60~250 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 250mV/0.25V |
| 耗散功率Pc Power Dissipation | 250mW/0.25W |
| Description & Applications | • NPN high-voltage transistors FEATURES • Low current (max. 300 mA) • High voltage (max. 160 V). APPLICATIONS • General purpose switching and amplification • Especially used for telephony applications. |
| 描述与应用 | •NPN高压晶体管 特点 •低电流（最大300毫安） •高电压（最大160 V）。 应用 •通用开关和放大 •专门用于电话应用。 |
