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BSS123-7-F MOSFET N-Channel 100V 170mA/0.17A SOT-23/SC-59 marking K23 fast switch/Logic level compatible

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Product description
最大源漏极电压Vds Drain-Source Voltage100V
最大栅源极电压Vgs(±) Gate-Source Voltage100V
最大漏极电流Id Drain Current170mA/0.17A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance3.4Ω/Ohm @1.7A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage0.8-1.2V
耗散功率Pd Power Dissipation360mW/0.36W
Description & ApplicationsN-Channel Logic Level Enhancement Mode Field Effect Transistor BSS100: 0.22A, 100V. RDS(ON)= 6W @ VGS = 10V. BSS123: 0.17A, 100V. RDS(ON)= 6W @ VGS = 10V High density cell design for extremely low RDS(ON) Voltage controlled small signal switch. Rugged and reliable.
描述与应用BSS100:0.22A,100V。RDS(ON)=6W@ VGS= 10V。 BSS123:0.17A,100V。 RDS(ON)=6W@ VGS= 10V 高密度电池设计极低的RDS(ON) 电压控制小信号开关。 坚固,可靠
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