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BSS138 MOSFET N-Channel 50V 220mA/0.22A SOT-23/SC-59 marking J1

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Product description
最大源漏极电压Vds Drain-Source Voltage50V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current220mA/0.22A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance3.5Ω/Ohm @220mA,10V
开启电压Vgs(th) Gate-Source Threshold Voltage0.8-1.5V
耗散功率Pd Power Dissipation360mW/0.36W
Description & ApplicationsN-Channel Logic Level Enhancement Mode Field Effect Transistor Features • 0.22 A, 50 V. RDS(ON) = 3.5Ω @ VGS = 10 V RDS(ON) = 6.0Ω @ VGS = 4.5 V • High density cell design for extremely low RDS(ON) • Rugged and Reliable • Compact industry standard SOT-23 surface mount package
描述与应用N沟道逻辑电平增强模式场效应晶体管 •高密度电池设计极低的RDS(ON) •坚固和可靠的 •紧凑型工业标准SOT-23表面贴装封装
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