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BSS209PW MOSFET P-Channel -20V -580mA 0.369ohm SOT-323 marking X3

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
12V
最大漏极电流Id
Drain Current
-0.58A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.369Ω @-580mA,-4.5V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.6--1.2V
耗散功率Pd
Power Dissipation
520mW/0.52W
Description & Applications• P-Channel • Enhancement mode • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated
描述与应用•P沟道 •增强模式 •超级逻辑电平(2.5 V额定) •150°C工作温度 •额定雪崩 •dv / dt的额定
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