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BSS209PW MOSFET P-Channel -20V -580mA 0.369ohm SOT-323 marking X3
最大源漏极电压Vds Drain-Source Voltage | -20V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
最大漏极电流Id Drain Current | -0.58A |
源漏极导通电阻Rds Drain-Source On-State Resistance | 0.369Ω @-580mA,-4.5V |
开启电压Vgs(th) Gate-Source Threshold Voltage | -0.6--1.2V |
耗散功率Pd Power Dissipation | 520mW/0.52W |
Description & Applications | • P-Channel • Enhancement mode • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated |
描述与应用 | •P沟道 •增强模式 •超级逻辑电平(2.5 V额定) •150°C工作温度 •额定雪崩 •dv / dt的额定 |