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BSS284 MOSFET P-Channel -50V -130mA 5ohm SOT-23 marking SD

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-50V
最大栅源极电压Vgs(±)
Gate-Source Voltage		20V
最大漏极电流Id
Drain Current		-0.13A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		5Ω @-130mA,-10V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-0.8--1.8V
耗散功率Pd
Power Dissipation		360mW/0.36W
Description & ApplicationsSIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th)= -0.8...-1.6 V
描述与应用SIPMOS®小信号晶体管 •P沟道 •增强模式 •逻辑电平 •VGS（TH）=-0.8...-1.6 V
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