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BSS84P MOSFET P-Channel -60V -170mA 5.8ohm SOT-23 marking YB

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-60V
最大栅源极电压Vgs(±)
Gate-Source Voltage		20V
最大漏极电流Id
Drain Current		-0.17A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		5.8Ω @-170mA,-10V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-1--2V
耗散功率Pd
Power Dissipation		360mW/0.36W
Description & Applications P-Channel Enhancement mode Logic Level Avalanche rated dv/dt rated
描述与应用P沟道 增强模式 逻辑电平 额定雪崩 dv / dt的额定
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