BST120 MOSFET P-Channel -60V -300mA 6ohm SOT-89 marking LM high-speed switch no secondary breakdown|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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BST120 MOSFET P-Channel -60V -300mA 6ohm SOT-89 marking LM high-speed switch no secondary breakdown

Model：BST120
Mark / screen / code / typing：LM
Manufacturer：
Date Code：05+
Package：SOT-89/SC-62
Standard Package：1000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	-60V
最大栅源极电压Vgs(±) Gate-Source Voltage	20V
最大漏极电流Id Drain Current	-0.3A
源漏极导通电阻Rds Drain-Source On-State Resistance	6Ω @-200mA,-10V
开启电压Vgs（th） Gate-Source Threshold Voltage	-1.5--3.5V
耗散功率Pd Power Dissipation	1W
Description & Applications	P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR very low Ron direct interface to C-MOS high-speed switching no second breakdown
描述与应用	P-沟道增强型垂直D-MOS晶体管非常低罗恩 C-MOS直接接口高速开关无二次击穿

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