BST82 MOSFET N-Channel 100V 180mA/0.18A SOT-23/SC-59 marking 02W high density battery designvery low RDS/voltage control small signal switch|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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BST82 MOSFET N-Channel 100V 180mA/0.18A SOT-23/SC-59 marking 02W high density battery designvery low RDS/voltage control small signal switch

Model：BST82
Mark / screen / code / typing：02W
Manufacturer：
Date Code：04+ 05+NOPB500
Package：SOT-23/SC-59
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	100V
最大栅源极电压Vgs(±) Gate-Source Voltage	20V
最大漏极电流Id Drain Current	180mA/0.18A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs（th） Gate-Source Threshold Voltage
耗散功率Pd Power Dissipation	830mW/0.83W
Description & Applications	TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package.
描述与应用	开关速度非常快逻辑电平兼容超小型表面贴装封装

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