Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
BST82 MOSFET N-Channel 100V 180mA/0.18A SOT-23/SC-59 marking 02W high density battery designvery low RDS/voltage control small signal switch
| 最大源漏极电压Vds Drain-Source Voltage | 100V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 180mA/0.18A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | |
| 耗散功率Pd Power Dissipation | 830mW/0.83W |
| Description & Applications | TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package. |
| 描述与应用 | 开关速度非常快 逻辑电平兼容 超小型表面贴装封装 |
