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BYG21M-E3/TR3 Fast Recovery Diodes 1000V 1.5A 1.6V 120nS SMA/DO-214AC marking BYG21M rectifier/fast reverse recovery time
| 反向电压Vr Reverse Voltage | 1000V |
| 平均整流电流Io AverAge Rectified Current | 1.5A |
| 最大正向电压降VF Forward Voltage(Vf) | 1.6V |
| 反向恢复时间Trr Reverse Recovery Time | 120nS |
| 最大耗散功率Pd Power dissipation | |
| Description & Applications | Fast Silicon Mesa SMD Rectifier Features Glass passivated junction Low reverse current Soft recovery characteristics Fast reverse recovery time Good switching characteristics Wave and reflow solderable |
| 描述与应用 | 快速硅梅萨贴片整流桥 特点 玻璃钝化结 低反向电流 软恢复特性 快速反向恢复时间 良好的开关特性 波和回流焊接 |
