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CPH6302 P MOSFET -30V -3A SOT-163/SOT23-6/CPH6 marking JB ultra high-speed switch 4V drive
| 最大源漏极电压Vds Drain-Source Voltage |
-30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage |
20V |
| 最大漏极电流Id Drain Current |
-3A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance |
270mΩ@ VGS = -4V, ID = -0.5A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage |
-1~-2.5V |
| 耗散功率Pd Power Dissipation |
1.6W |
| Description & Applications | P-Channel MOS Silicon FET Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive |
| 描述与应用 | P沟道MOS硅FET 超高速开关应用 特点 ·低导通电阻。 ·超高速开关。 ·4V驱动器 |
