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CPH6429-TL-E MOSFET N-Channel 50V 2A SOT-163/SOT23-6/CPH6 marking ZF high density battery designvery low RDS(ON)

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Product description
最大源漏极电压Vds Drain-Source Voltage50V
最大栅源极电压Vgs(±) Gate-Source Voltage10V
最大漏极电流Id Drain Current2A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.22Ω/Ohm @1A,4mW
开启电压Vgs(th) Gate-Source Threshold Voltage0.4-1.3V
耗散功率Pd Power Dissipation1.6W
Description & Applications · Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive.
描述与应用•低导通电阻。 •超高速开关。 •2.5V驱动
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