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DMN601K-7 MOSFET N-Channel 60V 300mA/0.3A SOT-23/SC-59 marking K7K high density battery designlow RDS/high saturation current capability
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20v |
| 最大漏极电流Id Drain Current | 300mA/0.3A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 2.9Ω/Ohm @500mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.0-2.5V |
| 耗散功率Pd Power Dissipation | 350mW/0.35W |
| Description & Applications | · Low On-Resistance: RDS(ON) · Low Gate Threshold Voltage · Low Input Capacitance · Fast Switching Speed · Low Input/Output Leakage · Lead Free By Design/RoHS Compliant (Note 2) · ESD Protected Up To 2kV · "Green" Device (Note 4) |
| 描述与应用 | ·低导通电阻RDS（ON） ·低栅极阈值电压 ·低输入电容 ·开关速度快 ·低输入/输出漏 ·无铅设计/ RoHS规定（注2） ·ESD保护高达2kV ·“绿色”设备（注4） |
