Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
DTC115TE NPN Bipolar Digital Transistor (BRT) 50V 100mA/0.1A 100k sot-523/EMT3 marking 9
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 100KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
| 电阻比(R1/R2) Resistance Ratio | |
| 直流电流增益hFE DC Current Gain(hFE) | 250 |
| 截止频率fT Transtion Frequency(fT) | 250MHz |
| 耗散功率Pc Power Dissipation | 0.2W/200mW |
| Description & Applications | Features 1) The built-in bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input,and parasitic effects are almost completely eliminated. 2) Only the on / off conditions need to be set for operation, making device design easy. 3) Higher mounting densities can be achieved. |
| 描述与应用 | 特性 1）内置偏置电阻组成的薄膜电阻 完全隔离，允许负偏置输入和寄生效应几乎完全消除。 2）只有开/关条件需要设置操作，使装置的设计容易。 3）高密度安装，就可以实现。 |
