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DTC123EET1 NPN Bipolar Digital Transistor (BRT) 50V 100mA/0.1A 2.2k 2.2k gain8 sot-523 marking 8HN
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 2.2KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 2.2KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 1 |
| 直流电流增益hFE DC Current Gain(hFE) | 8 |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | 0.2W/200mW |
| Description & Applications | Features • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • The SC−75/SOT−416 Package Can be Soldered Using Wave or Reflow • The Modified Gull−Winged Leads Absorb Thermal Stress During Soldering Eliminating the Possibility of Damage to the Die • Pb−Free Packages are Available |
| 描述与应用 | 特性 •简化电路设计 •缩小板面空间 •减少元件数量 •SC-75/SOT-416包装可以焊接使用波或回流 •改进的鸥翼引线在焊接热应力吸收消除模具损坏的可能性 •无铅包可用 |
