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ECH8601 Complex FET 20V 7A ECH8 marking KC general switch 2.5V drive
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 7A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 35mΩ@ VGS = 2.5V, ID = 2A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5~1.3V |
| 耗散功率Pd Power Dissipation | 1.4W |
| Description & Applications | N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • Suitable for lithim-ion battery use. • Drain common specification. • 2.5V drive. |
| 描述与应用 | N-沟道硅MOSFET 通用开关设备应用 特点 •低导通电阻。 •适合为lithim离子电池使用。 •漏共同的规范。 •2.5V驱动。 |
