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EMB11 PNP+PNP Complex Bipolar Digital Transistor -40V -50mA 150mW/0.15W SOT-563/EMT6 marking B11 switching inverting interface driver circuit
|
V(BR) CBO Collector-Base Voltage |
-50V |
|
V(BR) CEO Collector-Emitter Voltage |
-50V |
| Collector Current(IC) | -0.1A |
| Input Resistance(R1) | 10kΩ |
| Base-Emitter Resistance(R2) | 10kΩ |
| Base-Emitter Input Resistance Ratio (R1/R2) | 1 |
| DC Current Gain(hFE) | |
| Transtion Frequency(fT) | 250MHZ |
| Power Dissipation （Pd） | 0.15W |
| Description & Applications | 1) Two DTA114E chips in a EMT package.
2) Dual PNP silicon transistor (each with two built in resistors)
|
| Technical Documentation Download | Read Online |
