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EMB9 PNP+PNP Complex Bipolar Digital Transistor -50V -0.1A 0.15W R1=10KΩ R2=47KΩ SOT563 marking B9 switching inverting interface driver circuit
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V(BR) CBO Collector-Base Voltage |
-50V |
|
V(BR) CEO Collector-Emitter Voltage |
-50V |
| Collector Current(IC) | -100MA |
| Input Resistance(R1) | 10KΩ |
| Base-Emitter Resistance(R2) | 47KΩ |
| Base-Emitter Input Resistance Ratio (R1/R2) | 4.7 |
| DC Current Gain(hFE) | |
| Transtion Frequency(fT) | 250MHZ |
| Power Dissipation （Pd） | 150MW |
| Description & Applications | General purpose(dual digital transistors)
Two DTA144Ys in a EMT or UMT or SMT package.
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| Technical Documentation Download | Read Online |
