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EMD4 PNP+NPN Complex Bipolar Digital Transistor 50V 0.1A 150mW SOT-563/EMT6 marking D4 switching inverting interface driver circuit
| Collector-Base Voltage(VCBO) Q1/Q2 | -50V/50V |
| Collector-Emitter Voltage(VCEO) Q1/Q2 | -50V/50V |
| Collector Current(IC) Q1/Q2 | -100mA/100mA |
| Q1 Input Resistance(R1) | 47KΩ/Ohm |
| Q1 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| Q1(R1/R2) Q1 Resistance Ratio | 1 |
| Q2 Input Resistance(R1) | 10KΩ/Ohm |
| Q2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| Q2(R1/R2) Q2 Resistance Ratio | 0.21 |
| DC Current Gain(hFE) | |
| Transtion Frequency(fT) | 250MHz |
| Pc Power Dissipation | 150mW/120mW |
| Description & Applications | Features •Dual Common Base−Collector Bias Resistor Transistors •Both the DTA114Y chip and DTC144E chip in an EMT6 or UMT6 package. •Mounting possible with EMT3 or UMT3 automatic mounting machines. •Transistor elements are independent, eliminating interference. •Mounting cost and area can be cut in half. |
| 描述与应用 | 特点 •双共基极 - 集电极偏置电阻晶体管 •两个DTA114Y的芯片和芯片的EMT6或UMT6的包DTC144E。 •安装可能EMT3或UMT3自动的安装机器。 •晶体管元素是独立的，消除干扰。 •安装成本和面积可减少一半。 |
