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EMD6 NPN+PNP Complex Bipolar Digital Transistor 50V/-50V 100mA/-100mA 100~600 150mW/120mW SOT-563/EMT6 marking D6 switching inverting interface driver circuit
| Collector-Base Voltage(VCBO) Q1/Q2 | 50V/-50V |
| Collector-Emitter Voltage(VCEO) Q1/Q2 | 50V/-50V |
| Collector Current(IC) Q1/Q2 | 100mA/-100mA |
| Q1 Input Resistance(R1) | 4.7KΩ/Ohm |
| Q1Base-Emitter Resistance(R2) | |
| Q1(R1/R2) Q1 Resistance Ratio | |
| Q2 Input Resistance(R1) | 4.7KΩ/Ohm |
| Q2Base-Emitter Resistance(R2) | |
| Q2(R1/R2) Q2 Resistance Ratio | |
| DC Current Gain(hFE) | 100~600 |
| Transtion Frequency(fT) | 250MHz |
| Pc Power Dissipation | 150mW/120mW |
| Description & Applications | Features •Dual Common Base−Collector Bias Resistor Transistors •Both the DTA143T chip and DTC143T chip in an EMT or UMT or SMT package. •Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. •Transistor elements are independent, eliminating interference. •Mounting cost and area can be cut in half. |
| 描述与应用 | 特点 •双共基极 - 集电极偏置电阻晶体管 •两个DTA143T的EMT或UMT或SMT封装的芯片和DTC143T芯片。 •安装可能与EMT3或UMT3或SMT3自动安装机器。 •晶体管元素是独立的，消除干扰。 •安装成本和面积可减少一半 |
