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EMG11 Complex Bipolar Digital Transistor -50V -100mA 0.15W SOT-563/EMT6 marking G11 switching inverting interface driver circuit
| Collector-Base Voltage(VCBO) Q1/Q2 | -50V/-50V |
| Collector-Emitter Voltage(VCEO) Q1/Q2 | -50V/-50V |
| Collector Current(IC) Q1/Q2 | -100mA/-100MA |
| Q1 Input Resistance(R1) | 2.2KΩ/Ohm |
| Q1Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| Q1(R1/R2) Q1 Resistance Ratio | 0.047 |
| Q2 Input Resistance(R1) | 2.2KΩ/Ohm |
| Q2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| Q2 (R1/R2) Q2 Resistance Ratio | 0.047 |
| hFE DC Current Gain(hFE) | |
| Transtion Frequency(fT) Q1/Q2 | 250MHz/250MHZ |
| Power Dissipation Q1/Q2 | 150mW/0.15W |
| Description & Applications | Features •Emitter common (dual digital transistors) •Two DTA123Js chips in a EMT or UMT or SMT package.. |
| 描述与应用 | 特点 •发射极普通的（双数字晶体管） •的两个DTA123Js芯片在EMT或UMT或SMT封装. |
