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EMH25 NPN+NPN Complex Bipolar Digital Transistor 30V 100mA 150mW/0.15W SOT-563/EMT6 marking H25 switching inverting interface driver circuit
| Collector-Base Voltage(VCBO) Q1/Q2 | 50V/50V |
| Collector-Emitter Voltage(VCEO) Q1/Q2 | 50V/50V |
| Collector Current(IC) Q1/Q2 | 100mA/100MA |
| Q1 Input Resistance(R1) | 4.7KΩ/Ohm |
| Q1Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| Q1(R1/R2) Q1 Resistance Ratio | 0.1 |
| Q2 Input Resistance(R1) | 4.7KΩ/Ohm |
| Q2Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| Q2(R1/R2) Q2 Resistance Ratio | 0.1 |
| DC Current Gain(hFE) | |
| Transtion Frequency(fT) Q1/Q2 | 250MHz/250MHZ |
| Power Dissipation Q1/Q2 | 150mW/0.15W |
| Description & Applications | Features •General purpose (dual digital transistors) •Two DTC143Z chips in a EMT package. •Mounting possible with EMT automatic mounting machines. •Transistor elements are independent, eliminating interference. •Mounting cost and area can be cut in half. |
| 描述与应用 | 特点 •通用（双数字晶体管） •的两个DTC143Z芯片在EMT包。 •安装可能与EMT自动安装机器。 •晶体管元素是独立的，消除干扰。 •安装成本和面积可减少一半 |
