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FC109 PNP+PNP Complex Bipolar Digital Transistor -50V -100mA HEF=50 R1=R2=22KΩ 200mW/0.2W SOT-153/SOT23-5 marking 109 switching inverting interface driver circuit
|
V(BR) CBO Collector-Base Voltage |
-50V |
|
V(BR) CEO Collector-Emitter Voltage |
-50V |
| Collector Current(IC) | -100MA |
| Input Resistance(R1) | 22KΩ |
| Base-Emitter Resistance(R2) | 22KΩ |
| Base-Emitter Input Resistance Ratio (R1/R2) | 1 |
| DC Current Gain(hFE) | 50 |
| Transtion Frequency(fT) | 200MHZ |
| Power Dissipation （Pd） | 0.2W |
| Description & Applications | Features•PNP Epitaxial Planar Silicon Composite Transistor•On-chip bias resistors (R1=22kΩ, R2=22kΩ)•Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.•The FC109 is formed with two chipe |
| Technical Documentation Download | Read Online |
