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FCX619TA NPN Transistors(BJT) 50V 2.75A 165MHz 100~400 320mV/0.32V SOT-89 marking 619 power（switch）
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 2.75A |
| 截止频率fT Transtion Frequency(fT) | 165MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~400 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 320mV/0.32V |
| 耗散功率Pc Power Dissipation | 500mW/0.5W |
| Description & Applications | SOT89 NPN SILICON POWER(SWITCHING) TRANSISTOR 2W POWER DISSIPATION 6A PEAK PULSE CURRENT EXCELLENT hFE CHARACTERISTICS UP TO 6 Amps EXTREMELY LOW SATURATION VOLTAGE e.g. 13mV typ EXTREMELY LOW EQUIVALENT ON-RESISTANCE |
| 描述与应用 | SOT89 NPN硅功率（开关）晶体管 功耗为2W 6A峰值脉冲电流 优秀HFE特性6安培的 极低的饱和电压，例如典型13MV 极低的等效导通电阻 |
