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FDC2512 MOSFET N-Channel 150V 1.4A SOT-163/SOT23-6 marking 512 no secondary breakdown/fast switch/high input impedance

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Product description
最大源漏极电压Vds Drain-Source Voltage150V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current1.4A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance475mΩ@ VGS = 6V, ID = 1.3A
开启电压Vgs(th) Gate-Source Threshold Voltage2~4V
耗散功率Pd Power Dissipation1.6W
Description & Applications150V N-Channel Power Trench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Applications • DC/DC converte Features • 1.4 A, 150 V. RDS(ON) • High performance trench technology for extremely low RDS(ON) • Low gate charge (8nC typ) • High power and current handling capability • Fast switching speed
描述与应用150V N沟道功率沟槽MOSFET 概述 此N沟道MOSFET已专门设计,以提高整体效率的DC / DC转换器采用同步或传统开关PWM控制器。它已被优化低栅极电荷,低RDS(ON)和快速开关速度。 应用 •DC/ DC转换器具 特点 •1.4 A,150 V的RDS(ON) •高性能沟道技术极低的RDS(ON) •低栅极电荷(8NC典型值) •高功率和电流处理能力 •开关速度快
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